Abstract
A new type of microcavity system which allows a control of the resonances by tuning the Fabry-Perot resonator on a transition of the cavity material itself is presented. The resulting interaction between semiconductor excitations and the electromagnetic radiation can be manipulated according to the laws of QED as in usual QW microcavities. We have examined experimentally and theoretically two very different materials: bulk GaAs and porous silicon. In the first case one has to deal with a 3D exciton, whose center of mass is delocalized over the radiation wavelength, while in the second case the excitations are bound to small silicon nanoclusters. The mixing of exciton-photon modes and their coherent dynamics as well as satellite effects due to spatial dispersion are observed in GaAs cavities. Reduction of linewidth and emission intensity enhancement are obtained in the case of porous silicon. Non-linear behaviours originating from high carrier densities are also studied in both systems.
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