Abstract
Solidification of undercooled liquid (l) Si formed by pulsed laser melting of amorphous (a) layers has been studied experimentally and theoretically. Bulk nucleation apparently occurs at a temperature higher than that of the l→a phase transition. Release of latent heat on nucleation is crucial in determining the depth of melting. It is emphasized that bulk nucleation implies that the l→a transition cannot be explained by purely thermodynamic considerations.
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