Abstract
Current-voltage characteristics of the AlGeSeAl system with amorphous and polycrystalline GeSe films have been investigated at different temperatures in the range from 295 to 93 K. In the intermediate region between the Ohmic and the Schottky part of the characteristic, space charge limited currents have been observed at electric fields up to 10 7 V/m. The energy distribution of electron traps as well their density have been determined throughout the semiconductor energy gap. Trap levels in the interval from 0.26 to 0.90 eV are established. The trap density varies with semiconductor film thickness and is found to be within the limits 1.2 × 10 24 to 3.4 × 10 25 m −3 for the polycrystalline films, while for the amorphous ones it is about one order of magnitude larger.
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