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Abstract
Yttrium iron garnet (YIG) thin films with thickness 110 nm ≤ t ≤ 530 nm were grown on amorphous quartz substrates using pulsed laser deposition (PLD). The films show an improved magnetic and microwave performance. The value of saturation magnetization (4πMS) and ferromagnetic resonance (FMR) linewidth were found to be dependent on the thickness (t) of the film. The film with t = 530 nm shows a 4πMS value of 1725 (98% of the bulk value of YIG) and a minimum value for FMR linewidth of 57 Oe and 78 Oe respectively for the magnetic field applied perpendicular and parallel to the film plane. An almost linear relation between linewidth and coercivity is observed, which suggests a positive correlation between magnetic anisotropy, coercivity, and linewidth. The results demonstrated that YIG films prepared on quartz substrates can be beneficial to the application of YIG films to semiconductor integrated devices.
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