Bulk growth and portrayal investigation of 2,4,6-trinitrophenol crystal for nonlinear optical, electro-optic appliances

Abstract

The superior optical excellence 2,4,6-trinitrophenol bulk crystals apposite for NLO appliance were grown by conventional solution growth method (SEST-Slow Evaporation Solution Growth Technique) and Low temperature solution growth (SCST-Slow Cooling Solution Growth Technique). The full-grown organic TNP specimen crystallized in orthorhombic crystal system with noncentrosymmetric space group PCa21. The kernel (seed) specimen obtained by conventional solution growth method was slash along the (100) track (direction). A massive extent single crystal was fully fledged by Low temperature slow cooling process with facilitate of solubility statistics. The unit cell parameters were determined from single crystal X-ray diffraction studies. The developed crystals by both conventional solution growth and SCST methods were focused to assorted characterization processes such as HRXRD, dielectric, UV–Vis, Hardness and Laser damage threshold studies to investigate the eminence and optical chattels. The etching and high-resolution X-ray diffraction crams delegate that the SCST grown TNP largeness crystal encompasses superior crystalline fineness and lesser number of imperfections. The UV–Visible investigation exposes the optical merit of the SCST grown TNP crystal is superior to SEST grown crystal. The laser damage threshold of SEST and SCST grown TNP crystals has been scrutinized and SCST grown TNP crystal boast privileged damage threshold than the conventional method grown crystal. Microhardness measurements at disparate temperatures illustrate that crystals fully fledged by SCST method contain prominent mechanical steadiness than the crystals developed by SEST method. Dielectric dispersion is soaring in SCST method fully fledged crystal in contrast to SEST grown TNP specimen. The piezoelectric nature and the relative Second Harmonic Generation (for assorted particle sizes) of the material were also examined. Photoconductivity swot of the grown TNP crystals divulge a constructive (positive) photoconductivity performance of the specimen. The third order non-linear optical chattels of the SEST and SCST method grown TNP crystals were examined by the Z-scan method using a He–Ne laser functioning at 632.8 nm. The non-linear refractive index, non-linear absorption coefficient and third order non-linear susceptibility of the TNP crystals were also premeditated. The half wave voltage of the full-fledged crystal specimen premeditated from the electro-optic experimentation.