Abstract
Electromigration tests were performed at 200°C with SiO 2-covered, large-grained, narrow Al interconnect lines ending on semiconductor contacts, which were marked by different barrier layers. An overlapping Mo barrier layer produced premature contact failures by interface electromigration. The interface threshold value ( jl) th,i had been reduced by the covering oxide to about 400 A/cm. For Al current densities of 8 × 10 5 A/ cm 2 interface mass flow was avoided by using a short silicide-like barrier layer, which was restricted to the contact area only. The remaining mass flow mechanism was bulk electromigration, resulting in contact openings after extremely long stress periods. Bulk electromigration can be eliminated in oxide covered Al lines, if the positive biased ends are completely covered. The reason is a threshold value for bulk electromigration, which is increased considerably by the covering oxide to a time-dependent value of about 8 × 10 7 Ah/ cm at 200°C.
Published Version
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