Abstract
This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage. The bulk-driven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> EMI conveyed. The amplifier chip is implemented using a 0.35 μm standard CMOS process with a 1-V power supply.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Electromagnetic Compatibility
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
