Abstract
The electrical properties of the zinc and tin codoped indium oxide, In((2-2x))Sn(x)Zn(x)O(3) or ZITO, were investigated via high temperature electrical measurements over a range of pO(2). Results indicate the presence of the (2Sn(In) O(i)'')(x) neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.
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