Abstract
The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d( 5 2 ) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E i( k), for the four bulk valence bands are established along the Σ-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E i( k) dispersions are found to be in good agreement with each other. E i( k ∥) dispersions for two surface-related structures are established along the lines I - M and Y - M of the surface Brillouin zone.
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