Abstract
Heat treatment of p-type InP crystals leads to major changes in bulk properties of InP:Zn crystals, and to major changes in surface properties for InP:Zn and InP:Cd crystals. An increase of hole density extending 60 μm into the bulk is observed for InP:Zn crystals after heat treatment between 300 and 500 °C. The data may be successfully described by the outdiffusion of interstitial Zn during heat treatment, reducing the compensation of substitutional Zn acceptors. Such bulk effects are absent for InP:Cd crystals. Preferential evaporation from the surface of InP leads to changes due to P loss that for high heating temperatures result in visually observable excess indium. Such preferential evaporation produces surface states on the InP that change the transport mechanism of Au/InP junctions from thermionic emission to tunneling controlled, and reduce the barrier height of the junction. Since these effects are surface related they occur similarly for InP:Zn and InP:Cd crystals.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
