Abstract
Bulk and surface defects in Se and Si implanted and annealed GaAs have been studied by Transmission Electron Microscopy. Bulk defects have been found to be interstitial dislocation loops which contain a number of atoms slightly below the implanted dose. Stacking fault tetrahedra have been observed close to or at the surface in Se, but not in Si, implanted and annealed specimens, where other surface defects are present. Possible formation mechanisms are discussed.
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