Bulk and interface defects analysis of n-CdS/p-Si heterojunction solar cell

Abstract

Interface defects are detrimental for the performance of n-CdS/p-Si heterojunction solar cells. A model based on simulation studies has been developed in this work to correlate the defect density and the cell performance. Deep trap density, shallow trap density, interface defect density, and electron selective layer thickness are used as simulation parameters. Interface traps are found to be more dominant in deteriorating the device performance than the deep traps and the shallow traps. The effects of Cz-Si and FZ-Si are also studied in terms of trap density. The best efficiency determined through simulation in the present study for n-CdS/p-Si heterojunction solar cell is 18.72%. • Developed a self-consistent simulation model for n-CdS/p-Si heterojunction cell. • Simulation model for n-CdS/p-Si heterojunction cell produces 18.72% efficiency. • Interface defects are detrimental problem for n-CdS/p-Si heterojunction cell. • FZ-Si has better performance than Cz-Si in n-CdS/p-Si cell. • Thicker CdS layer is detrimental for the performance of n-CdS/p-Si cell.