Abstract
With the emergence of new sensing technologies, there is upcoming demand of high performance, small size and power efficient electronic sensors. Next-generation electronic sensor technology will be more advanced, miniaturized and power efficient. There are variety of sensing and transduction technologies label as piezoresistive, piezoelectric, capacitive, thermoelectric, magnetic and acoustic wave-based principles. Each technology has associated merits and drawbacks. Bulk acoustic wave (BAW) resonator-based sensor show the benchmarking performance which is not possible by any other competing sensing technology. It is perceived that BAW resonator-based sensor provide high sensitivity and selectivity. Therefore, there is huge demand of high frequency operating bulk acoustic wave resonators based electronic sensors. High frequency device operation is limited by many factors such as piezoelectric material layer quality, acoustic wave losses, film thickness and device area became very small in the sub-6 GHz regime. Electronic sensors are ubiquitous and seems to be an economy engine and largest growing segment in the electronic devices and sensor segment. Here, we review, the state-of-the-art development and recent breakthroughs in bulk acoustic wave resonators highlighting the major ongoing research. The review describes various piezo-electric materials property and various bulk acoustic wave resonators in detail. Some promising applications capitalizing the sensing techniques along with the characteristics and performance of bulk acoustic wave devices are also explained in the context of recent development. The prime objective of this review is to provide an up-to-date scientific framework related to this niche emerging research area. The survey reveals the potential of bulk acoustic wave resonators for different sensing applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of bulk acoustic wave resonators along with their structures are discussed.
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