Abstract
A two dimensional model for Bulk Acoustic Wave (BAW) resonators and filters is applied to predict electrical behaviour for various configurations. The results are explained in terms of lateral mode excitation at the electrode edge. It is found that both the vertical and lateral particle displacement should be considered to achieve realistic results, especially for the case of thick top electrodes. Furthermore the industrialization of the solidly mounted bulk acoustic wave filters within Philips Semiconductors is discussed. The industrial flow towards a wafer-level chip-scale packaged product for the USPCS standard is described. The characteristics of the first samples are close to the product specifications.
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