Abstract
We report on the optical properties and carrier kinetics of a set of InAs self-assembled quantum dots on (N11)A/B GaAs substrates by means of cw and time-resolved PL. The cw-PL spectra show a blue shift of the PL band on different (N11) QD structures when increasing the carrier photoinjection. This is attributed to a photoinduced screening of the quantum confined Stark shift of the QD optical transition due to a large built-in electric field. The presence of an internal electric field also induces intrinsic optical non-linearity in time-resolved measurements. The analysis of the recombination kinetics shows that the carrier screening occurs inside the QDs, thus demonstrating the intrinsic nature of the built-in field. The dependence of the internal field on the substrate orientation and termination agrees with the presence of piezoelectric field and permanent dipole moment inside the QDs.
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