Abstract
APPLIED PHYSICS The successful development of microelectromechanical (MEM) systems will depend on robust techniques for forming mechanical structures readily and reproducibly on the micrometer scale. Strittmatter et al . demonstrate the ability to form suspended membranes of p-type GaN, a material whose large piezoelectric response and chemical resilience make it an ideal candidate for MEM applications, especially in harsh environments. The p-type GaN is deposited on a sacrificial layer of n-type GaN. When placed in aqueous potassium hydroxide and exposed to ultraviolet illumination, the n-type material becomes photosensitive and etches away, leaving a freestanding p-type layer. Regions of n-GaN shielded from illumination by patterned metal photomasks deposited on the p-GaN act as pillars to hold the bridge in place. Application of a small positive bias to the metal mask regions during the electrochemical etch results in an enhanced etch rate approaching 30 micrometers per minute. — ISO Appl. Phys. Lett . 78 , 3226 (2001).
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