Building MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts for efficient hydrogen evolution reaction

Abstract

Developing the stable and efficient hydrogen evolution reaction (HER) electrocatalyst is greatly desirable for the production of hydrogen as a clean energy resource. Herein, we report a simple and effective approach to fabricate MoS2/S-doped g-C3N4 layered heterojunction electrocatalysts, which can adjust the electron structure, enhance the charge transfer rate and expose more active sites of MoS2 for HER. The optimized MoS2-C3N4-60 sample shows a small onset overpotential as low as 115 mV, a low overpotential of 173 mV to achieve current density of 10 mA/cm2, a low Tafel slope of 53 mV decade−1, and a high turnover frequency of 0.16 H2 s−1 per active site at η = 150 mV. This finding proposes a new strategy to fabricate 2D layered heterojunction for enhancing HER performance by rationally coupling two similar layered materials.