Abstract

The modulation strategies of dual active bridge (DAB) including single phase-shift (SPS), dual phase-shift (DPS), and triple phase-shift (TPS) have been proposed to optimize the efficiency, eliminate the reactive power, and release the current stress. While the previous literature focuses on the accurate loss model in steady states or small-signal analysis for dynamic response, the common-mode (CM) model has been largely ignored. The main contribution of this article then is to propose an analytical CM model for DAB, which considers the CM parasitic capacitors including those of grounded heatsink and transformer windings. Based on such model, the CM performance is compared among different modulation strategies. The impact of two H-bridge on the input and output CM voltage has been addressed. A prototype based on SiC devices is used to verify the proposed analytical mode under SPS, DPS, and TPS. It is found that while TPS improves the light-load efficiency it introduces the worst CM noise. Influence of the ZVS current setting on the CM performance is also discussed.

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