Abstract
Chlorinated chemical vapor deposition (CVD) chemistry for growth of homoepitaxial layers of silicon carbide (SiC) has paved the way for very thick epitaxial layers in short deposition time as well as novel crystal growth processes for SiC. Here, we explore the possibility to use a brominated chemistry for SiC CVD by using HBr as additive to the standard SiC CVD precursors. We find that brominated chemistry leads to the same high material quality and control of material properties during deposition as chlorinated chemistry and that the growth rate is on average 10% higher for a brominated chemistry compared to chlorinated chemistry. Brominated and chlorinated SiC CVD also show very similar gas-phase chemistries in thermochemical modeling. This study thus argues that brominated chemistry is a strong alternative for SiC CVD because the deposition rate can be increased with preserved material quality. The thermochemical modeling also suggest that the currently used chemical mechanism for halogenated SiC CVD m...
Highlights
Silicon carbide (SiC) is an excellent semiconductor material with unique properties that provide it with significant advantages over existing Si and III−V technologies
We find that brominated chemistry leads to the same high material quality and control of material properties during deposition as chlorinated chemistry and that the growth rate is on average 10% higher for a brominated chemistry compared to chlorinated chemistry
Typical PL spectra in the nearwhere pi is the partial pressure of species i, and Mi is the molecular mass of the same species
Summary
Silicon carbide (SiC) is an excellent semiconductor material with unique properties that provide it with significant advantages over existing Si and III−V technologies. Increasing the growth rate can, in principle, be done by increasing the precursor concentration in the CVD gas mixture This will lead to unwanted formation of silicon clusters in the gas phase that can lead to detrimental surface defects in the SiC layer.[5] This problem can be circumvented by physical methods such as adding more energy to the system to dissolve the silicon clusters[6] or lower the probability for silicon clusters to form by lower the silicon partial pressure by lowering the total pressure.[7] Addition of chlorine to the precursor gases is a chemical remedy to the formation of silicon clusters. The rationale is that the strong Si−Cl bond (417 kJ/mol or 4.32 eV) prevents Si−Si bonds (310 kJ/mol or 3.21 eV)[9] from forming
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