Abstract

AbstractMulti‐shelled ZnSeTe/ZnSe/ZnS quantum dots (QDs) have served as a promising eco‐friendly emitter for blue quantum dot light‐emitting diodes (QLEDs). While extensive studies have concentrated on the optimization of the shell species and thickness of the multi‐shelled QDs to raise the QLED electroluminescent performance, very few reports focus on the QD surface states involving ligand and defect modulations which are essential for high‐performance QLEDs. Herein, the strategy of bromide decoration is theoretically and practically demonstrated to simultaneously diminish the QD surface defects by passivating the unsaturated Zn for strengthened carrier radiative recombination and removing the superabundant oleic acid through ligand exchange for efficient carrier transport. As a result, the merits of bromide decoration benefit a large increase in photoluminescence quantum yield (PLQY) from 39.7% to 86.2% at the wavelength of 443 nm, as well as a great enhancement of the device performance with over sevenfold improvement in external quantum efficiency (EQE) from 0.74% to 5.46% and a distinct decrease in turn‐on voltage from 6.7 to 5.9 V. Consequently, this work contributes an effective approach of the multi‐shelled QD surface decoration toward enhanced QLED performance.

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