Abstract
It has been shown that the low-frequency 1/f1.5 noise in GaAs and SiC, and occasionally in Si, exists in the temperature region where a generation-recombination (GR) noise predominates that is due to a local level. The 1/f1.5 noise can be accounted for by energy level broadening, which inevitably occurs in any real crystal as a result of structural or doping inhomogeneities and defects. GR noise simulations were performed for GaAs and SiC, taking into account the effect of broadening. It has been shown that, to explain the experimental results, consideration must be given to the exponential energy dependence of the capture cross section sigma n= sigma 0 exp(-E1/kT) and the dependence of the energy E1 on the level position E0. The simulated and experimental results are in good agreement.
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