Abstract
In recent time, class-EF power amplifiers are promising for the high power added efficiency (PAE) by turning output matching network (OMN) to control the even and odd harmonics at the drain. High quality factor (Q) of output matching network in the circuit is required. So it is difficult to design a broadband high efficiency power amplifier. A practical method of broadband design by using microstrip radial stub instead of normal open or short stub is proposed in this paper. A compact OMN topological structure is also proposed to reduce the size of circuit. Simulation results show that proposal class-EF GaN HEMT power amplifier has PAE of more than 60% and bandwidth of 850MHz from 1.7GHz to 2.55GHz. The output power is from 41.5dBm to 42.5dBm.
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