Abstract
A three-layer structure is fabricated on a low-resistance silicon substrate using plasma chemical etching. We study it experimentally and show that a substrate with such a structure can be used as an absorber of terahertz (THz) radiation in the frequency range of 0.5−2.0 THz. For this structure, absorbance in the indicated frequency range is measured to be more than 95%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.