Broadband quasi-omnidirectional antireflection AlGaInP window for III-V multi-junction solar cells through thermally dewetted Au nanotemplate

Abstract

Al(Ga)InP subwavelength structures (SWS) were fabricated and optimized through thermally dewetted Au nanotemplate and ICP pattern-transfer. When λ< 900 nm, most AlGaInP nanostructures exhibit the reflectivity of less than 2% and insensitive to the incident angle up to 45°. When λ extends to 1800 nm, the reflectivity of less than 5% over 0°-45° is achieved in the optimized nanostructure, which benefits III-V multi-junction solar cells to improve their efficiency. Moreover, not only is such cost-effective nano-fabrication process completely compatible with the other processing of III-V solar cells, but their defined disordered SWS benefit the antireflection performance over broadband and wide view according to the comparison between the measurement and simulation results from AlGaInP SWS.