Abstract
The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.
Highlights
IntroductionThe classical method to detect a hidden microelectronic devices, containing working or non-working elements with a non-linear I – V characteristic, is the method of emitting a polarized electromagnetic wave of a monochromatic (single-frequency) signal and receiving the second and third harmonic components of the echo signal
The classical method to detect a hidden microelectronic devices, containing working or non-working elements with a non-linear I – V characteristic, is the method of emitting a polarized electromagnetic wave of a monochromatic signal and receiving the second and third harmonic components of the echo signal
One of the modern approaches in the field of detection of nonlinear junction is the method of sensing using broadband modulated radiation with a central frequency fc, a BW band and receiving and digitizing the echo signal, using high-speed ADCs, at the central frequencies 2fc and 3fc
Summary
The classical method to detect a hidden microelectronic devices, containing working or non-working elements with a non-linear I – V characteristic, is the method of emitting a polarized electromagnetic wave of a monochromatic (single-frequency) signal and receiving the second and third harmonic components of the echo signal. One of the modern approaches in the field of detection of nonlinear junction is the method of sensing using broadband modulated radiation with a central frequency fc, a BW band and receiving and digitizing the echo signal, using high-speed ADCs, at the central frequencies 2fc and 3fc. The use of a broadband modulated emitted signal allows, in addition to obtain the dependence of the microwave power on the amplitude of the echo signal, to measure the nonlinear distortion of the received modulated echo signal, which greatly expands the possibilities of analysis to determine the type of device detected. Studies shows that the use of emitted from a broadband modulated microwave signal can increase the detection range of hidden electronic devices. This paper presents the results of applying the design Methodology of a wideband pushpull large-signal power amplifier based on the GaN component base for high-performance devices for detecting nonlinear junction. Comparison of two different topologies of PA is shown for the comparison of their characteristics
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