Abstract
A multiband power amplifier module (PAM) comprised of an InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) broad-band power amplifier (PA) and a tunable multiband output matching circuit is proposed and demonstrated. The three-stage MMIC broad-band PA is realized by using the novel HBT structure and layout, applying broad-band and compensating matching technique in matching network design, adopting power gain predistortion at the first stage, and optimizing the distribution of power gain among stages. The output matching circuit is implemented with parallel inductance-capacitance (LC) tank circuits using p-i-n diodes to control the inductor value. This multiband PAM offers advantages of tunable frequency band, low insertion loss, small size, and high linearity. The multiband PAM biased at 3.5 V demonstrates 27-dB power gain, 30-dBm output power, and higher than 40% power-added efficiency at frequencies covering dual bands from 0.85 to 0.95 GHz and from 1.71 to 1.95 GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
