Broadband plasmonic indium arsenide photonic antennas.

Abstract

An on-chip integrated mid-infrared Fabry-Perot (F-P) polariton resonator exhibits excellent biosensing, thermal emission, and quantum laser utility potential. However, the narrow optical response range and absence of optoelectronic tunability have hindered the development of a F-P phonon polariton resonator. The discovery of surface plasmons in semiconductor nanowires provides a novel route to F-P polariton resonator devices with a broadband optical response and multi-field tunability. Due to their high electron mobility and crystalline quality, InAs twinning superlattice (TSL) nanowires have become a promising candidate in plasmonic electronics. We systemically studied the F-P plasmonic resonance of individual InAs TSL nanowires with a scattering-type near-field optical microscope. Using a metallic AFM tip to excite surface plasmons, we can observe odd-order and even-order modes of F-P polariton resonance, breaking the symmetric selection rules. Through nano Fourier transform infrared spectroscopy, we found that InAs nanowires' F-P polariton resonances appear in a broadband frequency range (650-1100 cm-1) and calculated that the corresponding Q factor is 5-10. This semiconductor F-P polariton resonator with inherent electrical tunability will be essential in integrated nanophotonic circuits.