Broadband photodetector of high quality Sb2S3 nanowire grown by chemical vapor deposition

Abstract

Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and property. In this work, one-dimensional Sb2S3 nanowires (NWs) with high crystallinity were grown via chemical vapor deposition (CVD) technique on SiO2/Si substrates. The Sb2S3 NWs exhibited needle-like structures with inclined cross-sections. The lengths of Sb2S3 nanowires changed from 7 to 13 μm. The photodetection properties of Sb2S3 nanowires were comprehensively and systematically characterized. The Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet (360 nm) to near-infrared (785 nm). An excellent specific detectivity of 2.1 × 1014 Jones, high external quantum efficiency of 1.5 × 104 %, sensitivity of 2.2 × 104 cm2W−1 and short response time of less than 100 ms was achieved for the Sb2S3 NW photodetectors. Moreover, the Sb2S3 NWs showed outstanding switch cycling stability that was beneficial to the practical applications. The high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.