Abstract
Broadband optical absorption measurement of silicon nanowires for photovoltaic solar cell applications
Highlights
To date, the catastrophic environmental pollution arising from burning fossil fuels has discriminating public concern, and the increasing dependence on renewable clean energy alternatively
The broadband optical absorption properties of silicon nanowire films fabricated by electroless metal deposition technique followed by HF/Fe(NO3)3 solutionbased chemical etching at room temperature on p-type silicon substrates have been measured and found absorption higher than that of the solid thin films of equivalent thickness
Synthesized structures absorbed more than % of incident radiation in case of Cu-deposited silicon nanowires, whereas for Ag it was maximum %, which is much greater than that of the bulk silicon as they absorbed maximum 43 % of the radiation
Summary
The catastrophic environmental pollution arising from burning fossil fuels has discriminating public concern, and the increasing dependence on renewable clean energy alternatively. Amongst the alternative energy sources, solar energy represents one of the most sustainable, environmentally acceptable and technologically promising renewable clean energy sources [1, 2]. The most common material used in solar cells is silicon. Silicon accounts for more than 98 % of the solar cell market [4]. This is primarily because of silicon is earth abundant, highly efficient, and air stable. Crystalline silicon solar cells have achieved efficiencies approaching 25 % in the laboratory and 20 % commercially [5]. Much attention has been drawn on the investigation of solar cells for decades
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