Abstract
This work proposes a new approach for designing broadband class-E power amplifier (PA) with shunt filter. The approach is based on the double reactance compensation technique. Using this technique reactance variation of loaded Q-factor of a shunt filter and parameters of L-shaped matching circuit are adjusted to minimize variation of load impedance at the device drain across frequency range. Based on this concept, a 10W output power class-E PA was designed, optimized in circuit simulator Keysight ADS and fabricated using GaN HEMT transistor. The manufactured PA has compact output circuit and provides drain efficiency over 65% across frequency range 1.7 - 2.8 GHz and over 60% drain efficiency across frequency range 1.4 - 2.8 Hz. The measured output power variation is 2 dB.
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