Abstract
Abstract Germanium selenide nanoplates (GeSe NPs) are considered to have broadband nonlinear optical (NLO) properties and great potential for applications in nanophotonic devices. In this work, we systematically studied the NLO response of GeSe NPs by the open-aperture Z-scan technique. GeSe NPs exhibit strong saturable absorption at wavelengths of 400, 800, and 1064 nm with different pulse durations. Furthermore, we investigated the excited carrier dynamics of GeSe NPs by the non-degenerate pump-probe technique. The fast and slow relaxation times at different wavelengths of 800, 871, 1064, and 1100 nm were components with lifetimes of about 0.54–1.08 and 52.4–167.2 ps, respectively. The significant ultrafast NLO properties of GeSe NPs imply their potential in the development of nanophotonic devices. Here, we designed and fabricated the all-optical diode by means of the GeSe/C60 tandem structure and demonstrated that the saturable absorption behavior of GeSe NPs can be used to fabricate a photonic diode, which exhibits nonreciprocal transmission of light similar to that of an electron diode.
Highlights
Nonlinear optics is the branch of modern optics which examines the behavior of light in nonlinear media [1]
2D materials, such as graphene [17,18,19,20], transition metal dichalcogenides (TMDs) [21,22,23,24], and black phosphorus (BP) [25,26,27,28,29], with broadband saturable absorption (SA) behavior and application in different wavebands were proved by experiment
From the results of our experiments, we found that germanium selenide (GeSe) NPs exhibited strong SA at a broadband from 400 nm to 1064 nm [αNL ~ 10−2 cm/GW; Imχ(3) ~ 10−14 esu; figure of merit (FOM) ~ 10−15 esu] and showed obvious pulse duration dependence
Summary
Nonlinear optics is the branch of modern optics which examines the behavior of light in nonlinear media [1]. Since the discovery of graphene in 2004, two-dimensional (2D) materials have attracted extensive research due to their unique electric properties and fascinating optical characteristics In order to meet the vigorous development of optoelectronic devices, further explorations of other possible 2D materials with appropriate characteristics including a proper band gap, air stability, high carrier mobility, and low cost are still mandatory. J. Tang et al.: Broadband NLO response in GeSe NPs study interest for its direct band gap, a relatively high 2 Results and discussion carrier mobility, high environmental stability, low toxicity, high abundance occurrence, unique photoelectric feature, etc
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