Abstract
Optical modulation on ultrashort time scales is both of central importance and an essential operation for applications in photonics and optoelectronics. Here, with a giant bandgap renormalization due to a high density of carrier injected by a femtosecond pulse, we realize an expected broadband saturable absorption in chemical vapor deposition grown monolayer transition-metal dichalcogenide MoSe2. Our findings reveal the band edge shift from ∼1.53 to ∼0.52 eV under the pump excitation of 0.80 eV, which is induced by the nonequilibrium occupation of electron-hole states after a Mott transition as well as the increase of carrier temperature.
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