Abstract
We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.
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