Broadband image sensor array based on graphene–CMOS integration

Abstract

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine other semiconductors than silicon with CMOS. Here, we show for the first time the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high-resolution image sensor and operate it as a digital camera that is sensitive to UV, visible and infrared light. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.