Abstract
For exploring a strong electro-optic effect from a graphene/hexagonal boron nitride (hBN) structure, here a comprehensive study for investigating the integrated broadband graphene/hBN modulators has been presented. Two representative configurations with a S i 3 N 4 waveguide were compared, focusing on optimizing the hBN thickness, waveguide width and height, and graphene size to balance their performances. It was found that 200 µm long devices with 65 nm hBN thickness allow for ∼ 80 G H z modulation bandwidth, 35.4 dB extinction ratio, and over 700 nm operation spectral range. Compared to the ridge S i 3 N 4 waveguide, the buried S i 3 N 4 waveguide was more suitable as an optical waveguide for the graphene/hBN modulator to obtain a large modulation depth of ∼ 0.17 d B µ m and a large operation spectral range from 750 to ∼ 1640 n m .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
