Abstract
The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.
Highlights
Over the past decades, photodetectors have been extensively used in both military and civil fields, such as living cell inspection [1], night vision [2], optical communications [3], atmospheric [4], etc. [5,6,7,8]
Photodetectors have become indispensable in daily life. Among these semiconductor materials for making photodetectors, Zinc Oxide (ZnO) has the potential of application in UV photodetectors
ZnO nanowire arrays (NWAs) were synthesized via a simple hydrothermal method with buffer layer sputtered on fluorine-doped tin oxide (FTO) glass
Summary
Photodetectors have been extensively used in both military and civil fields, such as living cell inspection [1], night vision [2], optical communications [3], atmospheric [4], etc. [5,6,7,8]. Photodetectors have been extensively used in both military and civil fields, such as living cell inspection [1], night vision [2], optical communications [3], atmospheric [4], etc. Photodetectors have become indispensable in daily life. Among these semiconductor materials for making photodetectors, ZnO has the potential of application in UV photodetectors. Owing to the great optoelectrical property and good stability in the atmosphere, ZnO is widely researched with the band gap of 3.37 eV, of which brought by high exciton binding energy (60 meV) at room temperature, noise interference is suppressed. Various morphologies of ZnO have been prepared during years of research, such as nanoparticle, nanowire, nanotube, nanofilm, and nanosheet [12,13,14,15].
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