Abstract
Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−xSx crystals with a relatively low (x = 0.04) and high (x = 0.29) content of sulfur was studied. The decrease of terahertz generation and detection efficiency at an increase of sulfur content in GaSe1−xSx was observed. The phase-matching conditions for electro-optical sampling in GaSe and GaSe1−xSx crystals were analyzed. The arising possibility to achieve the narrowing of terahertz detection bandwidth using thicker GaSe crystals was experimentally confirmed.
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