Abstract
Midinfrared InAs-based and GaSb-based semiconductor lasers with wavelengths from 3.3 to 4 μm have been used in a grating-tuned external cavity configuration. At 80 K, a tuning range up to ∼8% of the center wavelength has been obtained. Power of 0.2 W peak, 20 mW average has been demonstrated for multimode operation with ∼1–2 nm linewidth.
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