Abstract
Aluminum nitride(AlN) has an ultra-wide bandgap, which is one of the ideal materials for developing ultraviolet optoelectronic devices and has promising applications in the fields of space environment monitoring and materials science. Due to the existence of defects in the crystal growth process, broad-spectrum detectors were fabricated based on defective state AlN crystals. In this paper, AlN crystal detectors were fabricated and investigated the effect of different electrode work functions on the turn-on voltage. The vertical structure W-AlN-W device achieved broad spectral detection from ultraviolet(UV) to near-infrared(NIR) due to the presence of defects in the crystal, and persistent photoconductivity effect was observed for band-edge excitation. The present work provides implications for the development of AlN crystal-based detectors.
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