Abstract
AbstractUn‐ and Se‐doped nanostructured SnS thin films were synthesized (deposited) on FTO‐coated glass substrates using an electrodeposition method. A study of the crystallinity indicated an orthorhombic phase with a grain size of 54–75 nm. Morphological features of the films showed a well‐developed rod structure (less than 100 nm). Optical energy band gaps in the range of 1.26–1.46 eV were estimated for the deposited films. The effect of Se as a dopant on the determination of the optoelectronic and conductivity conversion from p‐ to n‐type nanostructured SnS thin films was investigated. In addition, an n‐type Se‐SnS film was obtained at lower concentrations of Se. This technique is suggested to control the electrical conductivity of deposited films to be applied in photoswitching‐based devices.
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