Abstract
A new sputtering-type metal-ion source for ion beam deposition was developed by using an electric mirror. Ion beams with an area of 80 cm2 were extracted from this source. The ion energy was controlled over a range from 50 to 500 eV. Ions with 200 eV energy were extracted with an average current density of more than 1 mA/cm2. The fraction of ions in the extracted metal reached about 30%. The fraction of metal ions in the total extracted ions, including Ar+ and metal ions, exceeded 10%. These fractions of metal ions monotonically increased with sputtering power. Both Al+ and Fe+ ions were extracted from this apparatus and deposited on the substrate.
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