Abstract
The novel method of indentation fracture tests conducted at a constant loading rate was modified to a two-step scheme that prepares a pre-crack for the subsequent constant-rate indentation cracking (CRIC) test. Application of this technique to an n-GaAs single crystal showed that, reflecting the brittle-to-ductile transition, crack extension is suppressed when the loading rate is below a certain value that increases with the increasing test temperature. If one assumes an Arrhenius-type kinetics, the activation energy is estimated to be 1.8 ± 0.5 eV, which is close to the glide activation energy of β dislocations in n-GaAs. The results are discussed in comparison with the previous results obtained in the original single-step CRIC tests.
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