Abstract
The major topics discussed at past conferences on narrow-gap semiconductors are briefly reviewed. After some remarks on the history of the discovery of the band structure of grey tin, the probable band structures of Sn-Ge alloys are discussed. This is followed by an account of MBE fabrication of films of alpha -Sn and alpha -Sn-Ge alloys which are stabilised by deposition on nearly lattice-matched InSb and CdTe, and of recent band structure calculations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
