Brief survey of narrow gap semiconductors, with particular reference to α-Sn and α-Sn-Ge alloys

Abstract

The major topics discussed at past conferences on narrow-gap semiconductors are briefly reviewed. After some remarks on the history of the discovery of the band structure of grey tin, the probable band structures of Sn-Ge alloys are discussed. This is followed by an account of MBE fabrication of films of alpha -Sn and alpha -Sn-Ge alloys which are stabilised by deposition on nearly lattice-matched InSb and CdTe, and of recent band structure calculations.