Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

Abstract

The Bridgman growth process for CdTe has been extended by applying the accelerated crucible rotation technique (ACRT). Modelling using ACRT has been extended to the 50 mm diameter required to produce grains large enough to yield CdTe (and Cd 0.96Zn 0.04Te) slices suitable for use in liquid phase epitaxy of Cd x Hg 1− x Te (CMT) layers. Two regimes are identified: ACRT parameter combinations which give maximum fluid velocities and that which maintains stable Ekman flow. Growth of crystals shows that larger single crystal regions are obtained when the Ekman flow is stable. Effects of changing the ampoule base shape have also been investigated. Techniques have been developed to produce 20 mm × 30 mm substrates oriented close to the (111) direction. Assessment of these samples has included IR transmission, IR microscopy, defect etching, X-ray topography and X-ray diffraction curve width measurements. Chemical analyses have been carried out to determine impurity levels and matrix element distributions. Good quality CMT epitaxial layers, as demonstrated by good surface topography, electrical data and chemical analyses, have been grown onto material produced in this study.