Abstract
Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.
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