Bridging Chloride Anions Enables Efficient and Stable InP Green Quantum‐Dot Light‐Emitting Diodes

Abstract

AbstractZnMgO nanoparticles (NPs) are commonly used as the electron transport layer (ETL) in indium phosphide (InP) based quantum dots light‐emitting diodes (QLEDs). It has been experimentally found that the inherent oxygen vacancy defects in ZnMgO can be passivated by halogen additives. However, an in‐depth understanding of how the halogen additives in ZnMgO affect the quantum dots (QDs) films is currently missing. Here, the study reports on efficient and stable indium phosphide (InP) green QLEDs by effectively bridging QDs and ETL using chloride (Cl) ions. As bi‐functional anchoring additives, Cl ions not only passivate the oxygen vacancy defects of ZnMgO NPs for suppressing the exciton quenching at the QDs/ZnMgO interfaces, but also facilitate the hole transport of QDs due to part replacement of insulated oleic acid ligands on the surfaces of InP QDs with Cl anions for more balanced charge injection in the devices. Consequently, the optimized green InP QLED achieves a peak external quantum efficiency (EQE) of 13.8% and an operational lifetime of 5944 h, which, to the best of current knowledge, represents the best overall performance among the reported green InP QLEDs.