Bridged oxide nanowire device fabrication using single step metal catalyst free thermal evaporation.

Mustafa Coşkun,Matthew M Ombaba,Fatih Dumludağ,Ahmet Altındal,M Saif Islam

doi:10.1039/c7ra11987a

Abstract

In this study, indium-tin-zinc-oxide (ITZO) and Zn doped In2O3 nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor–solid–solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current–voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped In2O3 nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.

Highlights

Nanowire based electronic device fabrication still faces some fabrication challenges including nanowire transfer from the mother substrate to the secondary substrate for deviceIn this study, we report an easy single-step thermal evaporation method to grow the bridged nanowires between two heavily doped Si electrodes on an SOI wafer without using metal catalyst or carrier gases
Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices
Excess Si was etched by using KOH solution or reactive ion etching and thereby Si pads were patterned on the SOI wafer

Summary

Introduction

We report an easy single-step thermal evaporation method to grow the bridged nanowires between two heavily doped Si electrodes on an SOI wafer without using metal catalyst or carrier gases. Electrical and optical measurements were performed using heavily doped Si pads as electrodes without depositing metal on them

Experimental

Results and discussion

Conclusions