Abstract
AbstractAs an important part of electronic packaging materials, low‐dielectric materials can ensure effective signal transmission between electronic components and have an impact on the performance of microprocessor chips. Herein, a porous poly(ether sulfone) membrane with low dielectric constant is fabricated via a breath figure method to meet requirements for high performance of new packaging materials. Perfluorononyl oxide side groups are introduced into the molecular structure of a block poly(ether sulfone) polymer by post‐grafting, and the pore‐making process and the dielectric properties of the materials are studied. The resulting multi‐block copolymers are found to have different electric and thermal properties depending on the molar ratio of perfluorononyl oxide side groups. Regular honeycomb pores can be formed with a polymer segment length of 8/16. Besides, the porous membranes with ordered pore structure on the surface possess low dielectric constant values ranging from 1.57 to 2.19 at 10 kHz. © 2021 Society of Industrial Chemistry.
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