Abstract
The Boltzmann limit of the subthreshold swing 2.3kT/q in MOSFETs is a widely-disseminated myth originated from a common amalgam between drain current and mobile charge. We show that the carrier mobility can substantially increase from weak to strong inversion due to the screening of potential fluctuations and Coulomb scattering. The mobility rise enables the current to increase faster than the inversion charge, thus breaking the apparent theoretical limit.
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